trimethylsilane (3MS)

Applications
Trimethylsilane is used in PECVD processes for depositing carbon doped silicate (CDS) low-k dielectric thin film with an oxidant precursor. CDS film has composition of SiOC:H and dielectric constant (k) from 2.7-3.1. It is adopted by many chip makers in their copper/low-k technologies with similar dielectric deposition tool sets. Using various process technologies, porous CDS low-k is also developed with reduced k values.

Critical Impurities
Impurities, such as O2, CO, CO2, H2O, CH4, and chlorine containing molecules, may be harmful to low-k film deposition processes. Particles on gas should be under control. Other silicon containing impurities may effect on dielectric constant and thermo-mechanical properties of low-k film.